Semiconductor device, method of connecting a semiconductor chip, circuit board, and electronic equipment

ABSTRACT

A semiconductor device comprises: a support member ( 20 ) on which a land ( 24 ) is formed; a semiconductor chip ( 10 ) having a bump for an electrode ( 12 ) that is disposed on the land ( 24 ), and to be bonded face-down to a support member ( 20 ); and resin ( 30 ) which is provided as an adhesive between the semiconductor chip ( 10 ) and the support member ( 20 ), which is allowed to contract on hardening, and which causes pressure-bonding between the land ( 24 ) and the bump ( 12 ) by the stress due to this hardening contraction. The stress therein is partially absorbed by elastic deformation of at least the support member ( 20 ).

TECHNICAL FIELD

The present invention relates to a semiconductor device, a method ofconnecting a semiconductor chip, a circuit board, and electronicequipment.

BACKGROUND OF ART

Known methods of connecting a semiconductor chip utilize the hardeningcontraction of a resin. In a method disclosed in Japanese PatentApplication Laid-Open No. 1-226161, for example, a semiconductor chip isdisposed on a substrate, resin is injected therebetween, and anelectrical connection between an electrode of the semiconductor chip anda circuit pattern on the substrate is created by the hardeningcontraction of the resin. This enables electrical connections by asimple process.

However, stress in the resin that has hardened on contraction andreaction force of the same order of magnitude are applied to theboundary surfaces between the semiconductor chip, the substrate, and theresin, so that releasing can easily occur. If releasing occurs, themaintaining force thereof becomes insufficient and it is no longerpossible to ensure an electrical connection.

DISCLOSURE OF INVENTION

The present invention solves the above described problem and has as anobjective thereof the provision of a semiconductor device, a method ofconnecting a semiconductor chip, a circuit board, and electronicequipment that make it possible to preserve electrical connections andensure the stablility thereof.

1) A semiconductor device in accordance with one aspect of the presentinvention comprises:

a support member on which is formed an interconnecting pattern includinga land;

a semiconductor chip to be bonded face-down to the support member andhaving a bump for an electrode that is disposed on the land; and

resin which provides adhesion between the semiconductor chip and thesupport member and which contracts on hardening, to cause the land andthe bump to be pressure-bonded by stress due to the hardeningcontraction,

wherein the stress is partially absorbed by elastic deformation of thesupport member, without changing the shape of the land.

With this aspect of the invention, the semiconductor chip and thesupport member are pulled together by stress generated by the hardeningcontraction of the resin, so that the land and bump are pressure-bond toform an electrical connection. Since the support member deformselastically, the stress generated by the hardening contraction of theresin is partially absorbed thereby. As a result, reaction force isreduced so that force applied to the boundary surfaces between thesemiconductor chip, the support member, and the resin are also reduced,preventing releasing. This improves the reliability of the electricalconnection between the land and the bump, in a stable manner.

In addition, this aspect of the invention makes it possible to maintainthe shape of the land, enabling a stable electrical connection with nomodification in the electrical characteristics of the land.

2) With this semiconductor device:

the support member may comprise a substrate and an adhesive which bondsthe interconnecting pattern to the substrate and which also deformselastically.

Since the adhesive deforms elastically, this ensures that the stress ispartially absorbed thereby.

3) With this semiconductor device:

the relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(A) of the adhesive may be such that:

E_(M)>E_(A).

In other words, the adhesive is easier to deform elastically than theresin, so that the stress may be absorbed partially by the adhesive.

4) With this semiconductor device:

the support member may be a substrate on which the interconnectingpattern is formed directly and which has deformed elastically.

Since the substrate deforms elastically, this ensures that the stress ispartially absorbed thereby.

5) with this semiconductor device:

the relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(S) of the substrate may be such that:

E_(M)>E_(S).

In other words, the substrate is easier to deform elastically than theresin, encouraging stress absorption by the substrate.

6) A semiconductor device in accordance with another aspect of thepresent invention comprises:

a substrate on which is formed an interconnecting pattern including aland, with an adhesive therebetween;

a semiconductor chip to be bonded face-down to the substrate and havinga bump for an electrode that is disposed on the land; and

resin which provides adhesion between the semiconductor chip and thesubstrate and which contracts on hardening, to cause the land and thebump to be pressure-bonded by stress due to the hardening contraction,

wherein the relationship between the elastic modulus E_(M) of the resinand the elastic modulus E_(A) of the adhesive is such that:

E_(M)>E_(A)

and the stress is partially absorbed by elastic deformation of at leastthe adhesive.

with this aspect of the invention, the semiconductor chip and thesubstrate are pulled together by the stress generated by the hardeningcontraction of the resin, causing pressure-bonding of the land and thebump and ensuring an electrical connection therebetween. Since theadhesive deforms elastically, the stress generated by the hardeningcontraction of the resin is partially absorbed thereby. As a result,reaction force is reduced so that force applied to the boundary surfacesbetween the semiconductor chip, the substrate, and the resin are alsoreduced, preventing releasing. This improves the reliability of theelectrical connection between the land and the bump, in a stable manner.

In addition, the adhesive is easier to deform elastically than theresin, encouraging stress absorption by the adhesive.

7) A semiconductor device in accordance with still another aspect of thepresent invention comprises:

a substrate on which is directly formed an interconnecting patternincluding a land;

a semiconductor chip to be bonded face-down to the substrate and havinga bump for an electrode that is disposed on the land; and

resin which provides adhesion between the semiconductor chip and thesubstrate and which contracts on hardening, to cause the land and thebump to be pressure-bonded by stress due to the hardening contraction,

wherein the relationship between the elastic modulus E_(M) of the resinand the elastic modulus E_(S) of the substrate is such that:

E_(M)>E_(S)

and the stress is partially absorbed by elastic deformation of at leastthe substrate.

With this aspect of the invention, the semiconductor chip and thesubstrate are pulled together by the stress generated by the hardeningcontraction of the resin, causing pressure-bonding of the land and thebump and ensuring an electrical connection therebetween. Since thesubstrate deforms elastically, the stress generated by the hardeningcontraction of the resin is partially absorbed thereby. As a result,reaction force is reduced so that force applied to the boundary surfacesbetween the semiconductor chip, the substrate, and the resin are alsoreduced, preventing releasing. This improves the reliability of theelectrical connection between the land and the bump, in a stable manner.

In addition, the substrate is easier to deform elastically than theresin, encouraging stress absorption by the substrate.

8) The present invention also applies to a circuit board on which isformed an interconnecting pattern including a land, with an adhesivetherebetween,

wherein a semiconductor chip is bonded face-down to the circuit board bydisposing a bump for an electrode on the land; resin provides adhesionbetween the semiconductor chip and the circuit board and contracts onhardening, the land and the bump are pressure-bonded by stress due tothe hardening contraction, and the stress is partially absorbed byelastic deformation of the adhesive, without changing the shape of theland.

with this aspect of the invention, the semiconductor chip and thecircuit board are pulled together by the stress generated by thehardening contraction of the resin, causing pressure-bonding of the landand the bump and ensuring an electrical connection therebetween. Sincethe adhesive deforms elastically, the stress generated by the hardeningcontraction of the resin is partially absorbed thereby. As a result,reaction force is reduced so that force applied to the boundary surfacesbetween the semiconductor chip, the circuit board, and the resin arereduced, preventing releasing. This improves the reliability of theelectrical connection between the land and the bump, in a stable manner.

In addition, this aspect of the invention makes it possible to maintainthe shape of the land, enabling a stable electrical connection with nomodification in the electrical characteristics of the land.

9) With this circuit board:

the relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(A) of the adhesive may be such that:

E_(M)>E_(A).

In other words, the adhesive is easier to deform elastically than theresin, encouraging stress absorption by the adhesive.

10) The present invention further applies to a circuit board on which isdirectly formed an interconnecting pattern including a land,

wherein a semiconductor chip is bonded face-down to the circuit board bydisposing a bump for an electrode on the land, resin provides adhesionbetween the semiconductor chip and the circuit board and contracts onhardening, the land and the bump are pressure-bonded by stress due tothe hardening contraction, and the stress is partially absorbed byelastic deformation of the circuit board, without changing the shape ofthe land.

With this aspect of the invention, the semiconductor chip and thecircuit board are pulled together by the stress generated by thehardening contraction of the resin, causing pressure-bonding of the landand the bump and ensuring an electrical connection therebetween. Sincethe circuit board deforms elastically, the stress generated by thehardening contraction of the resin is partially absorbed thereby. As aresult, reaction force is reduced so that force applied to the boundarysurfaces between the semiconductor chip, the circuit board, and theresin are reduced, preventing releasing. This improves the reliabilityof the electrical connection between the land and the bump, in a stablemanner.

In addition, this aspect of the invention makes it possible to maintainthe shape of the land, enabling a stable electrical connection with nomodification in the electrical characteristics of the land.

11) With this circuit board:

the relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(S) of the circuit board may be such that:

E_(M)>E_(S).

In other words, the circuit board is easier to deform elastically thanthe resin, encouraging stress absorption by the circuit board.

12) The present invention still further applies to a circuit board onwhich is formed an interconnecting pattern including a land, with anadhesive therebetween,

wherein a semiconductor chip is bonded face-down to the circuit board bydisposing a bump for an electrode on the land, resin provides adhesionbetween the semiconductor chip and the circuit board and contracts onhardening, and the land and the bump are pressure-bonded by stress dueto the hardening contraction;

wherein the relationship between the elastic modulus E_(M) of the resinand the elastic modulus E_(A) of the adhesive is such that:

E_(M)>E_(A); and

wherein the stress is partially absorbed by elastic deformation of atleast the adhesive.

With this aspect of the invention, the semiconductor chip and thecircuit board are pulled together by the stress generated by thehardening contraction of the resin, causing pressure-bonding of the landand the bump and ensuring an electrical connection therebetween. Sincethe adhesive deforms elastically, the stress generated by the hardeningcontraction of the resin is partially absorbed thereby. As a result,reaction force is reduced so that force applied to the boundary surfacesbetween the semiconductor chip, the circuit board, and the resin arereduced, preventing releasing. This improves the reliability of theelectrical connection between the land and the bump, in a stable manner.

In addition, the adhesive is easier to deform elastically than theresin, encouraging stress absorption by the adhesive.

13) The present invention yet further applies to a circuit board onwhich is directly formed an interconnecting pattern including a land,

wherein a semiconductor chip is bonded face-down to the circuit board bydisposing a bump for an electrode on the land, resin provides adhesionbetween the semiconductor chip and the circuit board and contracts onhardening, and the land and the bump are pressure-bonded by stress dueto the hardening contraction;

wherein the relationship between the elastic modulus E_(M) of the resinand the elastic modulus E_(S) of the circuit board is such that:

E_(M)>E_(S); and

wherein the stress is partially absorbed by elastic deformation of atleast the circuit board.

With this aspect of the invention, the semiconductor chip and thecircuit board are pulled together by the stress generated by thehardening contraction of the resin, causing pressure-bonding of the landand the bump and ensuring an electrical connection therebetween. Sincethe circuit board deforms elastically, the stress generated by thehardening contraction of the resin is partially absorbed thereby. As aresult, reaction force is reduced so that force applied to the boundarysurfaces between the semiconductor chip, the circuit board, and theresin are reduced, preventing releasing. This improves the reliabilityof the electrical connection between the land and the bump, in a stablemanner.

In addition, the circuit board is easier to deform elastically than theresin, encouraging stress absorption by the circuit board.

14) Electronic equipment in accordance with further aspect of thepresent invention has the above described semiconductor device.

15) Electronic equipment in accordance with still further aspect of thepresent invention has the above-described circuit board.

16) A method of connecting a semiconductor chip in accordance with stillfurther aspect of the present invention comprises:

a step of bonding a semiconductor chip in a face-down manner to asupport member on which is formed an interconnecting pattern including aland, in such a manner that a bump for an electrode is disposed on theland; and

a step of providing a resin as an adhesive between the semiconductorchip and the support member, causing the resin to harden on contraction,and pressure-bonding the land and the bump by stress due to thehardening contraction,

wherein the shape of the land is maintained while the support member isdeformed elastically, to absorb the stress partially.

With this aspect of the invention, the semiconductor chip and thesupport member are pulled together by the stress generated by thehardening contraction of the resin, causing pressure-bonding of the landand the bump and ensuring an electrical connection therebetween. Sincethe support member deforms elastically, the stress generated by thehardening contraction of the resin is partially absorbed thereby. As aresult, reaction force is reduced and force applied to the boundarysurfaces between the semiconductor chip, the support member, and theresin can be reduced, thus preventing releasing. This improves thereliability of the electrical connection between the land and the bump,in a stable manner.

In addition, this aspect of the invention makes it possible to maintainthe shape of the land, enabling a stable electrical connection with nomodification in the electrical characteristics of the land.

17) With this method of connecting a semiconductor chip:

the support member may comprise a substrate and an adhesive which bondsthe interconnecting pattern to the substrate and which also deformselastically; and

the adhesive may be deformed elastically.

Since the adhesive deforms elastically, this ensures that the stress ispartially absorbed thereby.

18) With this method of connecting a semiconductor chip:

the relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(A) of the adhesive may be such that:

E_(M)>E_(A).

In other words, the adhesive is easier to deform elastically than theresin, encouraging stress absorption by the adhesive.

19) With this method of connecting a semiconductor chip:

the support member may be a substrate on which the interconnectingpattern is formed directly; and

the substrate may be deformed elastically.

Since the substrate deforms elastically, this ensures that the stress ispartially absorbed thereby.

20) With this method of connecting a semiconductor chip:

the relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(S) of the substrate may be such that:

E_(M)>E_(S).

In other words, the substrate is easier to deform elastically than theresin, encouraging stress absorption by the substrate.

21) A method of connecting a semiconductor chip in accordance with stillfurther aspect of the present invention comprises:

a step of bonding a semiconductor chip in a face-down manner to asubstrate on which is formed an interconnecting pattern including aland, with an adhesive therebetween, in such a manner that a bump for anelectrode is disposed on the land;

a step of providing a resin as an adhesive between the semiconductorchip and the substrate, causing the resin to harden on contraction, andpressure-bonding the land and the bump by stress due to the hardeningcontraction,

wherein the relationship between the elastic modulus E_(M) of the resinand the elastic modulus E_(A) of the adhesive is such that:

E_(M)>E_(A); and

wherein at least the adhesive is deformed elastically, to absorb thestress partially.

With this aspect of the invention, the semiconductor chip and thesubstrate are pulled together by the stress generated by the hardeningcontraction of the resin, causing pressure-bonding of the land and thebump and ensuring an electrical connection therebetween. Since theadhesive deforms elastically, the stress generated by the hardeningcontraction of the resin is partially absorbed thereby. As a result,reaction force is reduced and force applied to the boundary surfacesbetween the semiconductor chip, the support member, and the resin canalso be reduced, preventing releasing. This improves the reliability ofthe electrical connection between the land and the bump, in a stablemanner.

In addition, the adhesive is easier to deform elastically than theresin, encouraging stress absorption by the adhesive.

22) A method of connecting a semiconductor chip in accordance with yetfurther aspect of the present invention comprises:

a step of bonding a semiconductor chip in a face-down manner to asubstrate on which is directly formed an interconnecting patternincluding a land, in such a manner that a bump for an electrode isdisposed on the land; and

a step of providing a resin as an adhesive between the semiconductorchip and the substrate, causing the resin to harden on contraction, andpressure-bonding the land and the bump by stress due to the hardeningcontraction,

wherein the relationship between the elastic modulus E_(M) of the resinand the elastic modulus E_(S) of the substrate is such that:

E_(M)>E_(S); and

wherein at least the substrate is deformed elastically, to absorb thestress partially.

With this aspect of the invention, the semiconductor chip and thesubstrate are pulled together by the stress generated by the hardeningcontraction of the resin, causing pressure-bonding of the land and thebump and ensuring an electrical connection therebetween. Since thesubstrate deforms elastically, the stress generated by the hardeningcontraction of the resin is partially absorbed thereby. As a result,reaction force is reduced and force applied to the boundary surfacesbetween the semiconductor chip, the substrate, and the resin can bereduced, thus preventing releasing. This improves the reliability of theelectrical connection between the land and the bump, in a stable manner.

In addition, the substrate is easier to deform elastically than theresin, encouraging stress absorption by the substrate.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1D illustrate a method of connecting a semiconductor chipand a connection configuration in accordance with an embodiment to whichthe present invention is applied;

FIG. 2 illustrates a modification on this embodiment of the invention;

FIG. 3 illustrates another modification on this embodiment of theinvention;

FIG. 4 shows a semiconductor device fabricated in accordance with thepresent invention;

FIG. 5 shows electronic equipment having a circuit board orsemiconductor device in accordance with the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Preferred embodiments of the present invention are described below withreference to the accompanying drawings.

The description first concerns a method of connecting a semiconductorchip in accordance with an embodiment of the present invention, withreference to FIGS. 1A to 1D. In this embodiment of the invention, asemiconductor chip 10 is connected to a support member 20.

The semiconductor chip 10 has one or more bumps 12, where each of thesebumps 12 acts as an electrode for electrical connection with thecircuitry within the semiconductor chip 10. Note that these bumps 12 maybe formed of a conductive material such as gold, copper, nickel, orsolder, and may be formed to be spherical-shape or rectangularparallelepiped, provided they protrude from the base surface (activesurface) of the semiconductor chip 10. Bumps 12 of a height on the orderof 5 μm to 500 μm are often used; when they are of gold, they are oftenof a height on the order of 5 μm to 30 μm. Alternatively, these bumpsmay be formed on a land 24 side of an interconnecting pattern 22, andmay be a structure called a bump TAB (BTAB) in which the lands 24 areetched.

The interconnecting pattern 22 is formed on the support member 20. Theinterconnecting pattern 22 comprises the lands 24 on which the bumps 12of the semiconductor chip 10 will be mounted. The lands 24 are formed tocorrespond in number and position with the bumps 12.

In this application, the support member 20 refers to a member on whichthe interconnecting pattern 22 is formed. The support member 20 in thisembodiment of the invention is an adhesive 26 and a substrate 28, by wayof example. The adhesive 26 is interposed between the substrate 28 andthe interconnecting pattern 22 to form a three-layer substrate.Alternatively, the configuration maybe such that a multi-layer structureformed of a stack of layers of insulating resin and interconnectingpatterns is formed on a substrate, or a plurality of substrates may besuperimposed to form a multi-layer substrate. In addition to theinterconnecting pattern 22 on one surface of the substrate 28, anotherinterconnecting pattern may be formed on the other surface. Note that anexample in which the substrate alone acts as a support member, with noadhesive, will be described later with reference to FIG. 3.

The substrate 28 that forms part of the support member 20 is a circuitboard in accordance with this embodiment. The substrate 28 may be formedof either an organic or inorganic material, or it may be formed of acompound structure thereof. An example of the substrate 28 formed of anorganic material is a flexible substrate made of a polyimide resin.Examples of the substrate 28 formed of an inorganic material include aceramic substrate and a glass substrate. An example of a structure thatis a compound of organic and inorganic materials is a glass epoxysubstrate. The elastic modulus of the substrate 28 is not specificallylimited in this embodiment, but it is preferably small. Note that thefollowing examples are known as the elastic modulus of the substrate 28:

Flexible substrate: 60 kg/mm²

Glass epoxy substrate: 1,100 kg/mm²

Ceramic substrate: 350,000 kg/mm²

In this embodiment of the invention, resin 30 is used to ensure thatface-down bonding structure of the semiconductor chip 10 on the supportmember 20 is maintained. The resin 30 provides adhesion between thesemiconductor chip 10 and the support member 20, and the bumps 12 andthe lands 24 are pressure-bonded together by the stress induced by thecontraction of the resin 30 on hardening, or the thermal contractionthereof (which will be described later), or both the hardeningcontraction and the thermal contraction. It is therefore general to usea light-hardening resin or thermal-hardening resin which contracts onhardening, as the resin 30. In addition, the resin 30 preferably has ahigh adhesive strength with respect to the semiconductor chip 10 and thesupport member 20.

In this embodiment, the relationship between the elastic modulus E_(A)of at least a part (the adhesive 26) of the support member 20 afterhardening and the elastic modulus E_(M) of the resin 30 after hardeningis:

E_(M)>E_(A)

For example:

E_(M)=150 kg/mm²;

E_(A)=60 kg/mm²

In other words, the adhesive 26 is made to be easier than the resin 30to deform elastically in the direction of thickness of the semiconductorchip 10 and the substrate 28, in response to internal stress due to thecontraction on hardening of the resin 30, or internal stress due to thevolumetric contraction generated by the cooling from a hot state of theresin 30 if it is a thermal-hardening resin, or internal stress due toboth hardening contraction and volumetric contraction.

In this embodiment of the invention, the semiconductor chip 10 isconnected by using a member of the above described configuration, asdescribed below.

First of all, the support member 20 on which is formed theinterconnecting pattern 22 is prepared, as shown in FIG. 1A. The supportmember 20 comprises the adhesive 26 and the substrate 28. The bumps 12of the semiconductor chip 10 are then positioned above the lands 24 ofthe interconnecting pattern 22 so that the bumps 12 are disposed on thelands 24, as shown in FIG. 1B.

The resin 30 is then injected into the space between the semiconductorchip 10 and the support member 20 (the adhesive 26), as shown in FIG.1C. The resin 30 is then subjected to hardening appropriate to thecomposition thereof, to cause the resin 30 to exhibit hardeningcontraction. Stress generated by the hardening contraction, thermalcontraction, or both the hardening contraction and thermal contractionact to decrease the space between the semiconductor chip 10 and thesupport member 20. As a result, the bumps 12 and the lands 24 arepressure bonded to form electrical connections therebetween.Alternatively, the resin 30 maybe painted or applied in a liquid form orsheet form on the surface of the semiconductor chip 10 on which theactive elements are formed, or on the support member 20 facing thatsurface. The resin 30 used may also be an anisotropic conductiveadhesive into which is mixed some conductive particles.

In this embodiment of the invention, the relationship between theelastic modulus E_(A) of the adhesive 26 after hardening and the elasticmodulus E_(M) of the resin 30 after hardening is:

E_(M)>E_(A).

Thus the adhesive 26 is deformed elastically by the stress generated bythe hardening contraction of the resin 30, or the thermal contractionthereof, or both the hardening contraction and the thermal contractionthereof. The lands 24 sink into the layer formed of the adhesive 26, asshown by way of example in FIG. 1D. In addition, at least one of thebumps 12, the lands 24, and the substrate 28 may be made to deformelastically.

The thus obtained connection configuration makes it possible topartially absorb the stress generated by the hardening contraction ofthe resin 30 and also weaken the force that is generated in oppositedirections in the boundary surfaces between the semiconductor chip, thesupport member 20, and the resin 30, thus making it difficult forreleasing to occur. This also improves the reliability of the electricalconnections between the bumps 12 and the lands 24.

A modification of the above described embodiment of the invention isshown in FIG. 2. This modification differs from the above describedembodiment in that lands 34 shown in this figure are larger in plan, orare thinner, or are made of a softer material than the lands 24 of FIG.1A, or the adhesive 26 is made to be softer than the lands 24 of FIG.1A. All other components and methods are similar to those of the abovedescribed embodiment, and thus are denoted by the same referencenumerals.

In the previously described embodiment of the invention, the lands 24sink into the layer formed of the adhesive, without deformingsubstantially, as shown in FIG. 1D. In contrast thereto, the lands 34 ofthe example shown in FIG. 2 also deform due to the stress generated bythe hardening contraction of the resin 30, as the adhesive 26 deformselastically for the previously described reasons. Note that it ispreferable that the deformation of the lands 34 is elastic deformation.This configuration makes it possible to achieve the same effects asthose of the above described embodiment of the invention.

Another modification on the above described embodiment is shown in FIG.3. In this modification, a support member 48 which does not include anadhesive is used. In other words, a conductive film of a material suchas copper is deposited on the support member 48 by a method such assputtering, then this is etched to form an interconnecting pattern 42comprising lands 44. In this case, the interconnecting pattern 42 isformed directly on the support member 48 to configure a two-layersubstrate with no adhesive therebetween. The relationship between theelastic modulus E_(S) of the support member 48 and the elastic modulusE_(M) of the resin 30 is:

E_(M)>E_(S).

For example:

E_(M)=150 kg/mm²;

E_(S)=60 kg/mm²

In other words, the support member 48 is easier to deform elasticallythan the resin 30. This relationship can be achieved if the supportmember 48 is a flexible substrate made of a polyimide resin, by way ofexample. All other components and methods are similar to those of theabove described embodiment, and thus are denoted by the same referencenumerals.

In the example shown in FIG. 3, the support member 48, acting as asubstrate, deforms elastically due to the stress generated by thehardening contraction of the resin 30. This elastic deformation makes itpossible to partially absorb the stress generated by the hardeningcontraction and/or thermal contraction of the resin 30. In addition, thebumps 12 may also deform elastically. This configuration also makes itpossible to achieve the same effects as those of the above describedembodiments. Note that the support member 48 is shown in a greatlydeformed state in FIG. 3, to make this state clear, but in actualpractice it is considered that this deformation will not be discernibleto the naked eye. In addition, the adhesive surface of the resin 30 withrespect to the support member 48 may be deformed by being warped in abimetal manner. Note that the support member 20 in the three-layersubstrate of FIG. 1D is also thought to deform in accordance with theelastic modulus thereof, when viewed on a microscopic level.

A further modification of the above described embodiment is shown inFIG. 4. This example relates to the fabrication of a semiconductordevice to which is applied the connection configuration of thesemiconductor chip of the present invention. The semiconductor device isshown in FIG. 4 as a completed product. In this semiconductor device,the semiconductor chip 10 is bonded face-down to a support member 50. Inthis case, the support member 50 comprises an adhesive 56 and asubstrate 58, and an interconnecting pattern 52 is formed thereon. Theinterconnecting pattern 52 comprises lands 54 that are connectedelectrically to external electrodes 60 by conductive members that passthrough the substrate 58. Each of the external electrodes 60 is formedof a solder ball or the like.

Note that the previously described substrate 28 may also be selected foruse as the support member 50. The configuration may be such that amulti-layer structure formed of a stack of layers of insulating resinand interconnecting patterns is formed on the support member 50, or aplurality of substrates may be superimposed to form a multi-layersubstrate. All other components and methods are similar to those of theabove described embodiment of the invention, and thus are denoted by thesame reference numerals.

In the example shown in FIG. 4 too, the layer formed of the adhesive 56deforms elastically in such a manner that at least part of each of thelands 54 sinks thereinto, so that the stress is partially absorbed. Thisexample also makes it possible to achieve the same effects as those ofthe above described embodiment. Note that at least one of the bumps 12,the lands 54, and the substrate 58 may be made to deform elastically inthis example too.

The present invention can be applied to a chip scale/size package (CSP)type of semiconductor device, or a face-down type of semiconductordevice in which at least one semiconductor chip is mounted, or a moduleconfiguration thereof. A semiconductor device of face-down type may be achip-on-flex/film (COF) or a chip-on-board (COB) structure, by way ofexample. The present invention can also be applied to a CSPsemiconductor device in which a plurality of semiconductor chips aremounted.

The semiconductor device shown in FIG. 4 may have the externalelectrodes 60, or part of the substrate 58 may be extended to provideexternal connections therefrom. Part of the substrate 58 may form aconnector lead, connectors may be installed on the substrate 58, or theinterconnecting pattern 52 of the substrate 58 itself may be connectedto other electronic equipment.

In addition, the configuration may be such that the external electrodes60 are not formed in actuality, but a solder cream is provided to themotherboard side when the device is mounted on a motherboard is usedeffectively so that the surface tension of the solder cream when meltedforms external electrodes. Such a semiconductor device is called a landgrid array type of semiconductor device.

As described above, this embodiment of the invention ensure that localelastic deformation occurs within a structure formed of thesemiconductor chip, bumps, lands, and support member, due to thehardening or thermal contraction force of resin in accordance with theelastic modulus of these components, to ensure that electricalconnections between the bumps and the lands are maintained more stably.

A notebook-sized personal computer 100, which is an example ofelectronic equipment having a circuit board or semiconductor device towhich the present invention is applied, is shown in FIG. 5.

Note that a semiconductor chip is used by way of example in thisdescription of the invention, but the present invention may also beapplied to an electronic component for surface mounting that requires alarge number of bumps, similar to that of a semiconductor chip,regardless of whether this is an active component or a passivecomponent. Examples of such electronic components include resistors,capacitors, coils, oscillators, filters, temperature sensors,thermistors, varistors, variable resistors, or fuses, by way of example.

In addition, a plurality of the semiconductor chips may be mounted inall of the previously described embodiments of the invention. In otherwords, it is possible to mix a semiconductor chip mounted by one of thepreviously described mounting methods, together with a semiconductorchip mounted by another mounting method, such as one that is mounted ina face-down manner, having a bonding portion around the semiconductorchip, or a semiconductor chip mounted by a wire bonding method.Furthermore, electronic components other than those semiconductor chipscan be mixed with such semiconductor chips, to form a module type ofsemiconductor device.

What is claimed is:
 1. A semiconductor device comprising: a supportmember on which is formed an interconnecting pattern including a land; asemiconductor chip to be bonded face-down to the support member andhaving a bump that is disposed on the land; and resin which providesadhesion between the semiconductor chip and the support member and whichcontracts on hardening, to cause the land and the bump to bepressure-bonded by stress due to the hardening contraction, wherein thestress is partially absorbed by elastic deformation of the supportmember, without changing the shape of the land.
 2. The semiconductordevice as defined by claim 1, wherein the support member comprises asubstrate and an adhesive which bonds the interconnecting pattern to thesubstrate and which also deforms elastically.
 3. The semiconductordevice as defined by claim 2, wherein the relationship between theelastic modulus E_(M) of the resin and the elastic modulus E_(A) of theadhesive is such that: E_(M)>E_(A).
 4. The semiconductor device asdefined by claim 1, wherein the support member is a substrate on whichthe interconnecting pattern is formed directly and which has deformedelastically.
 5. The semiconductor device as defined by claim 4, whereinthe relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(S) of the substrate is such that: E_(M)>E_(S). 6.Electronic equipment having the semiconductor device as defined byclaim
 1. 7. A semiconductor device comprising: a substrate on which isformed an interconnecting pattern including a land, with an adhesivetherebetween; a semiconductor chip to be bonded face-down to thesubstrate and having a bump that is disposed on the land; and resinwhich provides adhesion between the semiconductor chip and the substrateand which contracts on hardening, to cause the land and the bump to bepressure-bonded by stress due to the hardening contraction, wherein therelationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(A) of the adhesive is such that: E_(M)>E_(A) and thestress is partially absorbed by elastic deformation of at least theadhesive.
 8. Electronic equipment having the semiconductor device asdefined by claim
 7. 9. A semiconductor device comprising: a substrate onwhich is directly formed an interconnecting pattern including a land; asemiconductor chip to be bonded face-down to the substrate and having abump that is disposed on the land; and resin which provides adhesionbetween the semiconductor chip and the substrate and which contracts onhardening, to cause the land and the bump to be pressure-bonded bystress due to the hardening contraction, wherein the relationshipbetween the elastic modulus E_(M) of the resin and the elastic modulusE_(S) of the substrate is such that: E_(M)>E_(S) and the stress ispartially absorbed by elastic deformation of at least the substrate. 10.Electronic equipment having the semiconductor device as defined by claim9.
 11. A circuit board on which is formed an interconnecting patternincluding a land, with an adhesive therebetween, wherein a semiconductorchip is bonded face-down to the circuit board by disposing a bump on theland; resin provides adhesion between the semiconductor chip and thecircuit board and contracts on hardening, the land and the bump arepressure-bonded by stress due to the hardening contraction, and thestress is partially absorbed by elastic deformation of the adhesive,without changing the shape of the land.
 12. The circuit board as definedby claim 11, wherein the relationship between the elastic modulus E_(M)of the resin and the elastic modulus E_(A) of the adhesive is such that:E_(M)>E_(A).
 13. Electronic equipment having the circuit board asdefined by claim
 11. 14. A circuit board on which is directly formed aninterconnecting pattern including a land, wherein a semiconductor chipis bonded face-down to the circuit board by disposing a bump on theland, resin provides adhesion between the semiconductor chip and thecircuit board and contracts on hardening, the land and the bump arepressure-bonded by stress due to the hardening contraction, and thestress is partially absorbed by elastic deformation of the circuitboard, without changing the shape of the land.
 15. The circuit board asdefined by claim 14, wherein the relationship between the elasticmodulus E_(M) of the resin and the elastic modulus E_(S) of the circuitboard is such that: E_(M)>E_(S).
 16. Electronic equipment having thecircuit board as defined by claim
 14. 17. A circuit board on which isformed an interconnecting pattern including a land, with an adhesivetherebetween, wherein a semiconductor chip is bonded face-down to thecircuit board by disposing a bump on the land, resin provides adhesionbetween the semiconductor chip and the circuit board and contracts onhardening, and the land and the bump are pressure-bonded by stress dueto the hardening contraction; wherein the relationship between theelastic modulus E_(M) of the resin and the elastic modulus E_(A) of theadhesive is such that: E_(M)>E_(A); and wherein the stress is partiallyabsorbed by elastic deformation of at least the adhesive.
 18. Electronicequipment having the circuit board as defined by claim
 17. 19. A circuitboard on which is directly formed an interconnecting pattern including aland, wherein a semiconductor chip is bonded face-down to the circuitboard by disposing a bump on the land, resin provides adhesion betweenthe semiconductor chip and the circuit board and contracts on hardening,and the land and the bump are pressure-bonded by stress due to thehardening contraction; wherein the relationship between the elasticmodulus E_(M) of the resin and the elastic modulus E_(S) of the circuitboard is such that: E_(M)>E_(S); and wherein the stress is partiallyabsorbed by elastic deformation of at least the circuit board. 20.Electronic equipment having the circuit board as defined by claim 19.21. A method of connecting a semiconductor chip, the method comprising:a step of bonding a semiconductor chip in a face-down manner to asupport member on which is formed an interconnecting pattern including aland, in such a manner that a bump is disposed on the land; and a stepof providing a resin as an adhesive between the semiconductor chip andthe support member, causing the resin to harden on contraction, andpressure-bonding the land and the bump by stress due to the hardeningcontraction, wherein the shape of the land is maintained while thesupport member is deformed elastically, to absorb the stress partially.22. The method of connecting a semiconductor chip as defined by claim21, wherein the support member comprises a substrate and an adhesivewhich bonds the interconnecting pattern to the substrate and which alsodeforms elastically; and wherein the adhesive is deformed elastically.23. The method of connecting a semiconductor chip as defined by claim22, wherein the relationship between the elastic modulus E_(M) of theresin and the elastic modulus E_(A) of the adhesive is such that:E_(M)>E_(A).
 24. The method of connecting a semiconductor chip asdefined by claim 21, wherein the support member is a substrate on whichthe interconnecting pattern is formed directly; and wherein thesubstrate is deformed elastically.
 25. The method of connecting asemiconductor chip as defined by claim 24, wherein the relationshipbetween the elastic modulus E_(m) of the resin and the elastic modulusE_(S) of the substrate is such that: E_(M)>E_(S).
 26. A method ofconnecting a semiconductor chip, the method comprising: a step ofbonding a semiconductor chip in a face-down manner to a substrate onwhich is formed an interconnecting pattern including a land, with anadhesive therebetween, in such a manner that a bump is disposed on theland; a step of providing a resin as an adhesive between thesemiconductor chip and the substrate, causing the resin to harden oncontraction, and pressure-bonding the land and the bump by stress due tothe hardening contraction, wherein the relationship between the elasticmodulus E_(M) of the resin and the elastic modulus E_(A) of the adhesiveis such that: E_(M)>E_(A); and wherein at least the adhesive is deformedelastically, to absorb the stress partially.
 27. A method of connectinga semiconductor chip, the method comprising: a step of bonding asemiconductor chip in a face-down manner to a substrate on which isdirectly formed an interconnecting pattern including a land, in such amanner that a bump is disposed on the land; and a step of providing aresin as an adhesive between the semiconductor chip and the substrate,causing the resin to harden on contraction, and pressure-bonding theland and the bump by stress due to the hardening contraction, whereinthe relationship between the elastic modulus E_(M) of the resin and theelastic modulus E_(S) of the substrate is such that: E_(M)>E_(S); andwherein at least the substrate is deformed elastically, to absorb thestress partially.